Method of manufacturing a semiconductor device

ABSTRACT

An interlayer insulating film is formed. Then a first gate electrode and a second gate electrode are buried in the interlayer insulating film. Then, an anti-diffusion film is formed over the interlayer insulating film, over the first gate electrode, and over the second gate electrode. Then, a first semiconductor layer is formed over the anti-diffusion film which is present over the first gate electrode. Then, an insulating cover film is formed over the upper surface and on the lateral side of the first semiconductor layer and over the anti-diffusion film. Then, a semiconductor film is formed over the insulating cover film. Then, the semiconductor film is removed selectively to leave a portion positioned over the second gate electrode, thereby forming a second semiconductor layer.

CROSS-REFERENCE TO RELATED SPECIFICATIONS

The disclosure of Japanese Patent Application No. 2011-273229 filed onDec. 14, 2011 including the specification, drawings, and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention concerns a semiconductor device having transistorsin an interconnect layer and a method of manufacturing the semiconductordevice.

Japanese Unexamined Patent Application Publication No. 2010-141230describes that a semiconductor film is formed in an interconnect layerand transistors are formed by using the semiconductor film and theinterconnect of the interconnect layer. In the transistor, theinterconnect positioned below the semiconductor film is used as a gateelectrode and anti-diffusion film between the interconnect layers isused as a gate insulating film.

SUMMARY

For improving the degree of freedom in the circuit design, it ispreferred to form a plurality types of transistors in one identicallayer. For changing the type of the transistors, the type of thesemiconductor layer as a channel is preferably changed. However, when itis intended to form a plurality type of semiconductor layers in oneidentical layer, if the plurality of semiconductor layers are in contactto each other upon deposition, there may be a possibility that thecharacteristics of the semiconductor layers are changed.

According to one aspect of the present invention, a semiconductor deviceincludes: a multilayer interconnect layer having a first interconnectlayer and a second interconnect layer positioned over the firstinterconnect layer; and a first transistor and a second transistorformed by using the first interconnect layer, and the first transistorhas: a first gate electrode buried in the first interconnect layer; afirst gate insulating film positioned over the first gate electrode; afirst semiconductor layer positioned over the first gate insulatingfilm; and an insulating cover film positioned below the secondinterconnect layer and covering the upper surface and the lateral sideof the first semiconductor layer, and the second transistor has: asecond gate electrode buried in the first interconnect layer; a secondgate insulating film positioned over the second gate electrode; and asecond semiconductor layer positioned over the second gate insulatingfilm, at least partially positioned over the insulating cover film, andcomprising a material different from that of the first semiconductorlayer.

According to another aspect of the present invention, a method ofmanufacturing a semiconductor device includes: burying a first gateelectrode and the second gate electrode in the first interlayerinsulating film; forming a first gate insulating film and a firstsemiconductor layer over the first gate electrode; forming an insulatingcover film over the upper surface and on the lateral side of the firstsemiconductor layer; forming a second semiconductor layer over theinsulating cover film and over the second gate electrode, andselectively removing the second semiconductor layer while leaving aportion of the second semiconductor layer positioned over the secondgate electrode.

Since the aspects of the present invention can prevent contact betweenthe first semiconductor layer and the second semiconductor layer from toeach other, change of the characteristics of the first transistor andthe second transistor can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view showing a configuration of asemiconductor device according to a first embodiment;

FIG. 2 is a plan view of a first transistor 200 shown in FIG. 1;

FIG. 3 is a cross sectional view showing a manufacturing method of thesemiconductor device shown in FIG. 1;

FIG. 4 is a cross sectional view showing the manufacturing method of thesemiconductor device shown in FIG. 1;

FIG. 5 is a cross sectional view showing the manufacturing method of thesemiconductor device shown in FIG. 1;

FIG. 6 is a cross sectional view showing the manufacturing method of thesemiconductor device shown in FIG. 1;

FIG. 7 is a cross sectional view showing the manufacturing method of thesemiconductor device shown in FIG. 1;

FIG. 8 is a cross sectional view showing a configuration of asemiconductor device according to a second embodiment;

FIG. 9 is a cross sectional view showing a configuration of asemiconductor device according to a third embodiment;

FIG. 10 is a cross sectional view showing a configuration of asemiconductor device according to a fourth embodiment;

FIG. 11 is a cross sectional view showing a method of manufacturing asemiconductor device according to a fifth embodiment;

FIG. 12 is a cross sectional view showing a method of manufacturing thesemiconductor device according to the fifth embodiment;

FIG. 13 is a cross sectional view showing a method of manufacturing thesemiconductor device according to the fifth embodiment;

FIG. 14 is a cross sectional view showing a method of manufacturing thesemiconductor device according to the fifth embodiment;

FIG. 15 is a cross sectional view showing a configuration of asemiconductor device according to a sixth embodiment;

FIG. 16 is a cross sectional view showing a method of manufacturing thesemiconductor device according to the sixth embodiment;

FIG. 17 is a cross sectional view showing a configuration of asemiconductor device according to a seventh embodiment;

FIG. 18 is a planar view showing a configuration of a semiconductordevice according to an eighth embodiment;

FIG. 19 is a circuit diagram of the semiconductor device shown in FIG.18; and

FIG. 20 is a cross sectional view showing a configuration of asemiconductor device according to a ninth embodiment.

DETAILED DESCRIPTION

Preferred embodiments of the present invention will be described withreference to the drawings. Throughout the drawings, identicalconfigurational factors carry the same reference numerals, for whichdescription is optionally omitted.

First Embodiment

FIG. 1 is a cross sectional view showing a configuration of asemiconductor device according to a first embodiment. The semiconductordevice has a multilayer interconnect layer 100. The multilayerinterconnect layer 100 has a first interconnect layer 120 and a secondinterconnect layer 140. The first interconnect layer 120 is formed bystacking an interlayer insulating film 124 over an anti-diffusion film122. The second interconnect layer 140 is formed over the firstinterconnect layer 120 and formed by stacking an interlayer insulatingfilm 144 over an anti-diffusion film 144.

The anti-diffusion films 122 and 142 include insulating films containingat least two elements of Si, C, and N, for example, SiN film, SiCN film,or SiC film. The anti-diffusion films 122 and 142 may also be a stackedfilm of stacking at least two films described above. The thickness ofthe anti-diffusion films 122 and 142 is, for example, 10 nm or more and50 nm or less.

The interlayer insulating films 124 and 144 are, for example, siliconoxide or low k insulating film comprising, for example having andielectric constant lower than that of silicon oxide having a specificdielectric constant of 2.7 or lower. The low k insulating film is acarbon-containing film, for example, SiOC film, SiOCH film, SiLK(registered trademark), HSQ (hydrogen silsesquioxane) film, MHSQ(methylated hydrogen silsesquioxane) film, MSQ (methyl silsesquioxane)film, or a porous film thereof.

A via 132 and an interconnect 134 are buried in the interlayerinsulating film 124. The via 132 and the interconnect 134 are formed,for example, of a metal material comprising copper as a main ingredients(95% or more). The via 132 and the interconnect 134 may be formed by asingle damascene method of a dual damascene method. The via 132 may alsobe a contact.

The multilayer interconnect layer 100 is formed over a semiconductorsubstrate such as a silicon substrate (not illustrated in the drawing).Elements, for example, transistors are formed to the semiconductorsubstrate. The semiconductor substrate and the transistor are to bedescribed in other embodiments to be described later.

The multilayer interconnect layer 100 has a first transistor 200 and asecond transistor 300.

The first transistor 200 has a first gate electrode 210 and a firstsemiconductor layer 230. The first gate electrode 210 is formed in astep identical with that of the interconnect 134. That is, the firstgate electrode 210 is formed of a metal material comprising copper as amain ingredient (95% or more) and buried in the first interconnect layer120. The first semiconductor layer 230 is formed over an anti-diffusionfilm 142. The first semiconductor layer 230 opposes the first gateelectrode 210 by way of the anti-diffusion film 142. A portion of theanti-diffusion film 142 positioned between the first gate electrode 210and the first semiconductor layer 230 functions as a gate insulatingfilm of the first transistor 200.

A hard mask 232 is formed over the first semiconductor layer 230. Thehard mask 232 is used for leaving the first semiconductor layer 230selectively by etching. Therefore, the planar shape of the hard mask 232and that of the first semiconductor layer 230 is identical. The hardmask 232 may be any material so long as an etching selectivity isobtainable relative to the first semiconductor layer 230.

An insulating cover film 146 is formed over the hard mask 232 and theanti-diffusion film 142. The insulating cover film 146 also covers theupper surface and the lateral side of the hard mask 232 and the lateralside of the first semiconductor layer 230. The insulating cover film 146includes one of SiN film, SiO₂ film, SiOC film, and SiOCH film.

The second transistor 300 has a second gate electrode 310 and a secondsemiconductor layer 330. The second gate electrode 310 is formed by thesane step as that of the interconnect 134 and the first gate electrode210. That is, the second gate electrode 310 is formed of a metalmaterial comprising copper as a main ingredient (95% or more) and buriedin the first interconnect layer 120. The second semiconductor layer 330is formed over the insulating cover film 146. The second semiconductorlayer 330 is opposed to the second gate electrode 310 by way of theanti-diffusion film 142 and the insulating cover film 146. A portion ofthe anti-diffusion film 142 positioned between the second gate electrode310 and the second semiconductor layer 330 functions as a gateinsulating film of the second transistor 300. In the example shown inFIG. 1, portions of the anti-diffusion film 142 and the insulating coverfilm 146 positioned between the second gate electrode 310 the secondsemiconductor layer 330 function as the gate insulating film of thesecond transistor 300.

A hard mask 332 is formed over the second semiconductor layer 330. Thehard mask 332 is used when the second semiconductor layer 330 is leftselectively by etching. Therefore, the planar shape of the hard mask 332is identical with that of the second semiconductor layer 330. The hardmask 332 may be any material so long as etching selectivity isobtainable relative to the second semiconductor layer 330.

The thickness of the first semiconductor layer 230 and the secondsemiconductor layer 330, for example, 10 nm or more and 300 nm or less.The first semiconductor layer 230 and the second semiconductor layer 330each has an oxide semiconductor layer, for example, InGaZnO (IGZO) film,InZnO layer, ZnO layer, ZnAlO layer, ZnCuO layer, NiO layer, SnO layer,SnO₂ layer, CuO layer, Cu₂O layer, CuAlO layer, ZnO layer, ZnAlO layer,Ta₂O₅ layer, or TiO₂ layer. When the first transistor 200 is an n-typetransistor, the first semiconductor layer 230 is one of the InGaZnO(IGZO) layer, the InZnO layer, the ZnO layer, the ZnAlO layer, the ZnCuOlayer, and the CuO layer. When the first transistor 200 is a p-typetransistor, the first semiconductor layer 230 is one of the NiO layer,the SnO layer, the CuO layer, the Cu₂O layer, the CuAlO layer, the ZnOlayer, and the ZnAlO layer.

This is identical also for the second semiconductor layer 330. Each offirst semiconductor layer 230 and the second semiconductor layer 330 maybe a single layer structure of the oxide semiconductor layer describedabove, or a stacked structure of the oxide semiconductor layer describedabove and other layer. An example of the latter includes a stacked filmof IGZO/Al₂O₃/IGZO/Al₂O₃. The first semiconductor layer 230 and thesecond semiconductor layer 330 may also be a polysilicon layer or anamorphous silicon layer.

The first semiconductor layer 230 and the second semiconductor layer 330may be different in at least one of the thickness and the material.Thus, characteristics of the first transistor 200 and the secondtransistor 300 are different from each other.

For example, one of the first transistor 200 and the second transistor300 is an n-channel type transistor and the other of them is a p-channeltype transistor. The first transistor 200 and the second transistor 300may have a conduction type identical with each other and, for example,each of then may be an n-type transistor. In this case, the firstsemiconductor layer 230 and the second semiconductor layer 330 aredifferent from each other, for example, with respect to the thickness.

To each of the first semiconductor layer 230 and the secondsemiconductor layer 330, a source and a drain are provided. The methodof forming the source and the drain is to be described with reference tothe first semiconductor layer 230 as an example. When the firstsemiconductor layer 230 is an oxide semiconductor layer, the source andthe drain are formed, for example, by introducing oxygen defects butthey may also be formed by introducing an impurity. Further, the sourceand the drain may also be formed by modifying the first semiconductorlayer 230 when the contact is formed. When the first semiconductor layer230 comprises a polysilicon layer or an amorphous silicon layer, thesource and the drain are formed by introducing an impurity. The width ofthe source and the drain in the lateral direction of the gate (that is,a direction perpendicular to the surface of the drawing sheet in FIG. 1)is, for example, 50 nm or more and 10 μm or less.

A region of the first semiconductor layer 230 put between the source andthe drain defined a channel region. The channel region overlaps thefirst gate electrode 210 in a plan view. In the same manner, a region ofthe second semiconductor layer 330 put between the source and the draindefines a channel region. The channel region overlaps the secondelectrode 310 in a plan view.

The second interconnect layer 140 has interconnects 152, 154, and 156,and vias 151, 153, and 155. The interconnects 152, 154, and 156 areformed by a step identical with each other, and the vias 151, 153, and155 are formed also by a step identical with each other. Theinterconnects and vias may also be formed by a single damascene methodor a dual damascene method. The interconnects 152 are connected each byway of the via 151 to the source/drain of the first transistor 200. Theinterconnects 154 are connected each by way of the via 153 to thesource/drain of the second transistor 300. The interconnect 156 isconnected by way of the via 155 to the interconnect 134.

FIG. 2 is a plan view of the first transistor 200 shown in FIG. 1. Inthe example shown in FIG. 2, each of the first semiconductor layer 230and the second semiconductor layer 330 has a rectangular shape. The twovias 151 are connected the first semiconductor layer 230 near the twoshorter sides thereof. Further, the two vias 153 are connected to thesecond semiconductor layer 330 near the two shorter sides thereof.

FIG. 3 to FIG. 7 are cross sectional views showing a method ofmanufacturing the semiconductor device shown in FIG. 1. The method ofmanufacturing the semiconductor device has the following steps. Atfirst, an interlayer insulating film 124 is formed. Successively, afirst gate electrode 210 and a second gate electrode 310 are buried inthe interlayer insulating film 124. Then, an anti-diffusion film 142 isformed over the interlayer insulating film 124, over the first gateelectrode 210, and over the second gate electrode 310. Then, a firstsemiconductor layer 230 is formed over the anti-diffusion film 142 whichis positioned over the gate electrode 210. Then, an insulating coverfilm 146 is formed on the upper surface and on the lateral side of thefirst semiconductor layer 230, and over the anti-diffusion film 142.Then, a semiconductor film 334 is formed over the insulating cover film146. Then, the semiconductor film 334 is selectively removed to leave aportion positioned over the second gate electrode thereby forming asecond semiconductor layer 330. Details are to be described below.

At first, as shown in FIG. 3, transistors, etc. are formed in asemiconductor substrate (not illustrated) and, further, an interconnectlayer in the lower layer (not illustrated) is formed over thesemiconductor substrate. Then, an anti-diffusion film 122 is formed overthe interconnect layer. Then, an interlayer insulating film 124 isformed over the anti-diffusion film 122. Then, a via hole and aninterconnect trench are formed in the interlayer insulating film 124.

Then, a barrier metal film (not illustrated) is formed, optionally tothe bottom and the side wall of the via hole and the interconnect trenchand over the interlayer insulating film 124. The barrier metal film isformed, for example, by using a sputtering method. Then, a metal film(for example, copper film) is formed in the via hole and theinterconnect trench and over the interlayer insulating film 124, forexample, by using a plating method. Then, the metal film and the barriermetal film over the interlayer insulation 124 are removed by using, forexample, a CMP method. Thus, a first interconnect layer 120 is formed.The first interconnect layer 120 includes a via 132, an interconnect134, a first gate electrode 210, and a second gate electrode 310.

Then, an anti-diffusion film 142 is formed over the first interconnectlayer 120. The anti-diffusion film 142 is formed by using, for example,a CVD method.

Then, as shown in FIG. 4, a semiconductor layer is formed over theanti-diffusion film 142. When the semiconductor layer contains an oxidesemiconductor layer, the semiconductor layer is formed, for example, bya sputtering method. In this step, the semiconductor substrate is heatedto a temperature of 400° C. or lower. Further, when the semiconductorlayer is a polysilicon layer or an amorphous silicon layer, thesemiconductor layer is formed, for example, by a plasma CVD method.

Then, a hard mask 232 is formed over the semiconductor layer. Then, aresist pattern is formed over the hard mask 232 and the hard mask 232 isetched by using the resist pattern as a mask. Thus, the hard mask 232 isfabricated into a predetermined pattern. Then, the resist pattern isremoved. Then, the semiconductor layer is etched by using the hard mask232 as a mask. Thus, the first semiconductor layer 230 is formed.

Then, a source and a drain are formed to the semiconductor layer 230.

Then as shown in FIG. 5. an insulating cover film 146 is formed over thehard mask 232 and over the anti-diffusion film 142. The insulating coverfilm 146 is formed, for example, by a CVD method. In this step, theinsulating cover film 146 also covers the lateral side of the firstsemiconductor layer 230.

Then, as shown in FIG. 6, a semiconductor film 334 is formed over theinsulating cover film 146. The semiconductor film 334 is formed of amaterial different from that of the first semiconductor layer 230. Inthis step, the insulating cover film 146 is positioned between the firstsemiconductor layer 230 and the semiconductor film 334. Accordingly,direct contact between the first semiconductor layer 230 and thesemiconductor film 334 can be prevented.

Then, as shown in FIG. 7, a hard mask 332 is formed over thesemiconductor film 334. Then, a resist pattern is formed over the hardmask 332, and the hard mask 332 is etched by using the resist pattern asa mask. Thus, the hard mask 332 is fabricated into a predeterminedpattern. Then, the resist pattern is removed. Then, the semiconductorfilm 334 is etched by using the hard mask 332 as a mask. Thus, thesecond semiconductor layer 330 is formed.

Then, a source and a drain are formed to the semiconductor layer 330.

Then, an interlayer insulating film 144 is formed over the insulatingcover film 146 and the hard mask 332. Then, via holes and interconnecttrenches are formed in the interlayer insulating film 144. In the stepof forming the via holes in the interlayer insulating film 144, the hardmasks 232 and 332 also function as an etching stopper.

The step of forming the source and the drain to the first semiconductorlayer 230 and the step of forming the source and the drain to the secondsemiconductor layer 330 may be performed in this stage. For example, thesource and the drain are formed to the first semiconductor layer 230 andthe second semiconductor layer 330 by performing a treatment ofreductive plasma (for example, hydrogen plasma) or a treatment ofnitrogen-containing plasma (for example, ammonia plasma) to regions ofthe first semiconductor layer 230 and the second semiconductor layer 330exposed to the bottom of the via holes.

Then, a barrier metal film is formed optionally at the bottom and on theside wall of the via holes and the interconnect trenches, as well asover the interlayer insulating film 144. The barrier metal film isformed, for example, by using a sputtering method. Then, a metal film isformed in the via holes and the interconnect trenches, and over theinterlayer insulating film 144, for example, by a plating method. Then,the metal film and the barrier metal film over the interlayer insulatingfilm 144 are removed, for example, by using a CMP method. Thus, thesecond interconnect layer 140 is formed. The second interconnect layer140 includes interconnects 152, 154, and 156 and vias 151, 153, and 155.Thus, the semiconductor device shown in FIG. 1 is formed.

As described above, according to this embodiment, an insulating coverfilm 146 is formed over the upper surface and on the lateral side of thefirst semiconductor layer 230 after forming the first semiconductorlayer 230 and before forming the semiconductor film 334. Accordingly,this can prevent contact between the first semiconductor layer 230 andthe semiconductor film 334, which may otherwise change thecharacteristics of the semiconductor layer.

Further, the gate insulating film of the first transistor 200 is theanti-diffusion film 142, while the gate insulating film of the secondtransistor 300 comprises a stacked structure of the anti-diffusion film142 and the insulating cover film 146. Accordingly, the thickness of thegate insulating film of the first transistor 200 and the thickness ofthe gate insulating film of the second transistor 300 can be controlledindependently of each other. For example, in the embodiment shown inFIG. 1, the thickness of the gate insulating film of the secondtransistor 300 is made larger than the gate insulating film of the firsttransistor 200.

Second Embodiment

FIG. 8 is a cross sectional view showing a configuration of asemiconductor device according to a second embodiment. The secondsemiconductor device has the same configuration as that of thesemiconductor device according to the first embodiment except for thefollowing points.

At first, the thickness of a portion of the anti-diffusion film 142 notcovered by the first semiconductor layer 230 is less than the thicknessof a portion covered by the first semiconductor layer 230. This isbecause the portion of the anti-diffusion film 142 not covered by thefirst semiconductor layer 230 is etched when the first semiconductorlayer 230 is removed selectively.

Further, the thickness of the portion of the insulating cover film 146not covered by the second semiconductor layer 330 is less than thethickness of a portion covered by the second semiconductor layer 330.This is because a portion of the insulating cover film 146 not coveredby the second semiconductor layer 330 is etched when the secondsemiconductor layer 330 is removed selectively.

Also in this embodiment, the same effect as that of the first embodimentcan be obtained. Further, the thickness of the portion of theanti-diffusion film 142 that functions as the gate insulating film ofthe second transistor 300 is decreased when the first semiconductorlayer 230 is removed selectively. On the contrary, the gate insulatingfilm of the second transistor 300 is a stacked film of theanti-diffusion film 142 and the insulating cover film 146. Accordingly,this can suppress that the gate insulating film of the second transistor300 is excessively thin.

Third Embodiment

FIG. 9 is a cross sectional view showing a configuration of asemiconductor device according to a third embodiment. The semiconductordevice has the same configuration as that of the semiconductor deviceaccording to the second embodiment excepting that the thickness of thegate insulating film of the first transistor 200 is larger than thethickness of the gate insulating film of the second transistor 300.

Such a configuration can be obtained, for example, as described below.At first, the thickness of the anti-diffusion film 142 is increased tosome extent and the amount of etching for the portion of theanti-diffusion film 142 not covered by the first semiconductor layer 230is increased. Further, the thickness of the insulating cover film 146 isdecreased.

Also in this embodiment, the same effect as that of the secondembodiment can be obtained. Further, since the thickness of the gateinsulating film of the first transistor 200 can be made larger than thethickness of the gate insulating film of the second transistor 300, thedegree of freedom for the circuit design is improved.

Fourth Embodiment

FIG. 10 is a cross sectional view showing a configuration of asemiconductor device according to a fourth embodiment. The semiconductordevice has the same configuration as that of the semiconductor deviceaccording to any one of the first to third embodiments excepting thateach of the interconnect 152, 254, and 256 of the second interconnectlayer 140 comprise an Al interconnect. FIG. 10 shows a case identicalwith the second embodiment.

Specifically, the interconnect 152, 154, and 156 are positioned over aninterlayer insulating film 144. Further, the vias 151, 153, and 155 maybe formed integrally with the interconnects 152, 154, and 156 (that iswith Al), or may be formed of tungsten. The second interconnect layer140 may also include an electrode pad.

Also in this embodiment, the same effect as that of the first to thirdembodiments can be obtained.

Fifth Embodiment

FIG. 11 to FIG. 14 are cross sectional view showing a method ofmanufacturing a semiconductor device according to a fifth embodiment.The semiconductor device manufactured by the method has the sameconfiguration as that of the semiconductor device according to the firstto fourth embodiments excepting the following points. FIG. 11 to FIG. 14show a case identical with the first embodiment.

At first, a first opening 143 is formed in the portion of theanti-diffusion film 142 that overlaps the first gate electrode 210 andthe periphery thereof. Then, a gate insulating film 231 is depositedbetween the first semiconductor layer 230 and the first gate electrode210. That is, in this embodiment, the gate insulating film 231 of thefirst transistor 200 is formed of a film different from theanti-diffusion film 142. The material forming the gate insulating film231 has a higher specific dielectric constant than the material formingthe anti-diffusion film 142. For example, the gate insulating film 231includes an SiN layer, a composite metal oxide layer having a perovskitestructure, or a layer of oxide of one or more metals selected from Si,Al, Hf, Zr, Ta, and Ti. Further, the thickness of the gate insulatingfilm 231 is less than that of the anti-diffusion film 142. The thicknessof the gate insulating film 231 is, for example, 5 nm or more and 100 nmor less.

Further, the planar shape of the gate insulating film 231 and the firstsemiconductor layer 230 is larger than the planar shape of the firstopening 143. That is, portions of the gate insulating film 231 and thefirst semiconductor layer 230 are positioned over the anti-diffusionfilm 142.

Then, a method of manufacturing the semiconductor device is to bedescribed. At first, as shown in FIG. 11, an anti-diffusion film 122, aninterlayer insulating film 124, a via 132, an interconnect 134, a firstgate electrode 210, a second gate electrode 310, and an anti-diffusionfilm 142 are formed. The method of forming them is identical with thatof the first embodiment.

Then, a mask pattern (not illustrated) is formed over the anti-diffusionfilm 142 and the anti-diffusion film 142 is etched by using the maskpattern as a mask. Thus, the first opening 143 is formed in theanti-diffusion film 142. The first gate electrode 210 is exposed fromthe bottom of the first opening 143. Then, the mask pattern is removed.

Then, as shown in FIG. 12, a gate insulating film 231, a firstsemiconductor layer 230, and a hard mask 232 are formed in this orderover the anti-diffusion film 142 and in the first opening 143. Then,after fabricating the hard mask 132 to a predetermined pattern, astacked film of the gate insulating film 231 and the first semiconductorlayer 230 is etched by using the hard mask 232 as a mask. Thus, the gateinsulating film 231 and the first semiconductor layer 230 are formedinto a predetermined pattern. Then, an insulating cover film 146 isformed over the anti-diffusion film 142 and over the hard mask 232.

Then, as shown in FIG. 13, a second semiconductor layer 330 and a hardmask 332 are formed. The method of forming them is identical with thatof the first embodiment.

Then, as shown in FIG. 14, an interlayer insulating film 144, vias 151,153, and 155, and interconnects 152, 154, and 156 are formed. The methodof forming them is also identical with that of the first embodiment.

Also in this embodiment, the same effect as that of the first embodimentcan be obtained. Further, the gate insulating film 231 of the firsttransistor 200 is formed of a film different from the anti-diffusionfilm 142. Accordingly, the range for controlling the dielectric constantof the gate insulating film is extended.

Sixth Embodiment

FIG. 15 is a cross sectional view showing a configuration of asemiconductor device according to a sixth embodiment. The semiconductordevice has the same configuration as that of the semiconductor deviceaccording to the fifth embodiment except for the following points.

At first, a second opening 147 is formed in the portion of a stackedfilm of an anti-diffusion film 142 and an insulating cover film 146 thatoverlaps a second gate electrode 310 and the periphery thereof. Then, agate insulating film 331 is deposited between a second semiconductorlayer 330 and the second gate electrode 310. That is, in thisembodiment, the gate insulating film 331 of a second transistor 300 isformed of a material different from that of the anti-diffusion film 142.The material forming the gate insulating film 331 has a specificdielectric constant higher than that of the material forming theanti-diffusion film 142. For example, the gate insulating film 331contains an SiN layer, a composite metal oxide layer having a perovskitestructure, or a layer of oxide of one or more metals selected from Si,Al, Hf, Zr, Ta, and Ti. Further, the thickness of the gate insulatingfilm 331 is less than that of the anti-diffusion film 142. The thicknessof the gate insulating film 331 is, for example, 5 nm or more and 100 nmor less.

Further, the planar shape of the gate insulating film 331 and the secondsemiconductor layer 330 is larger than the planar shape of the secondopening 147. That is, portions of the gate insulating film 331 and thesecond semiconductor layer 330 are positioned over the insulating coverfilm 146.

The method of manufacturing the semiconductor device is to be describedwith reference to FIG. 15 and FIG. 16. At first, as shown in FIG. 16, ananti-diffusion film 122, an interlayer insulating film 124, a via 132,an interconnect 134, a first gate electrode 210, a second gate electrode310, an anti-diffusion film 142, a first opening 143, a gate insulatingfilm 231, a first semiconductor layer 230, a hard mask 232, and aninsulating cover film 146 are formed. The method of forming them isidentical with that of the fifth embodiment.

Then, a mask pattern (not illustrated) is formed over the insulatingcover film 146 and a stacked film of the insulating cover film 146 andthe anti-diffusion film 142 is etched by using the mask pattern as amask. Thus, a second opening 147 is formed in the insulating cover film146 and the anti-diffusion film 142. The second gate electrode 310 isexposed from the bottom of the second opening 147. Then, the maskpattern is removed.

Then, as shown in FIG. 15, a gate insulating film 331, a semiconductorfilm 334, and a hard mask 332 are formed in this order over theinsulating cover film 146 and in the second opening 147. Then, afterfabricating the hard mask 332 into a predetermined pattern, the stackedfilm of the gate insulating film 331 and the semiconductor film 334 isetched by using the hard mask 332 as a mask. Thus, the gate insulatingfilm 331 is formed into a predetermined pattern, and the secondsemiconductor layer 330 is formed.

Then, interlayer insulating film 144, vias 151, 153, and 155, andinterconnects 152, 154, and 156 are formed. The method of forming themis identical with that of the fifth embodiment.

Also in this embodiment, the same effect as that of the fifth embodimentcan be obtained. Further, the gate insulating film 331 of the secondtransistor 300 is formed of a film different from the anti-diffusionfilm 142 and the insulating cover film 146. Accordingly, the range ofcontrolling the dielectric constant of the gate insulating film 331 isextended.

Seventh Embodiment

FIG. 17 is a cross sectional view showing a configuration of asemiconductor device according to a seventh embodiment. Thesemiconductor device has the same configuration as that of thesemiconductor device according to the sixth embodiment excepting thatthe first transistor 200 has the same configuration as that of the firstto third embodiments. The method of manufacturing the semiconductordevice is identical with that of the semiconductor device according tothe sixth embodiment excepting that the first opening 143 and gateinsulating film 231 are not formed.

Also in this embodiment, the same effect as that of the first embodimentcan be obtained. Further, the gate insulating film 331 of the secondtransistor 300 is formed of a material different from that of theanti-diffusion film 142 and the insulating cover film 146. Therefore,the range of controlling the dielectric constant of the gate insulatingfilm 331 is extended.

Eighth Embodiment

FIG. 18 is a plan view showing a configuration of a semiconductor deviceaccording to an eighth embodiment. FIG. 19 is a circuit diagram of thesemiconductor device shown in FIG. 18. The semiconductor device has aninverter circuit. The inverter circuit comprises the first transistor200 and a second transistor 300. In the example shown in FIG. 18, thefirst transistor 200 is a p-type transistor and the second transistor300 is an n-type transistor. Alternatively, both of the first transistor200 and the second transistor 300 may be an n-type transistor.

That is, a first gate electrode 210 of the first transistor 200 and thesecond gate electrode 310 of the second transistor 300 are connected toan identical interconnect and a control signal V_(in) identical to eachother is inputted.

A first semiconductor 230 of the first transistor 200 is connected byway of a via 151 and an interconnect 152 on one side to a power sourceinterconnect (V_(dd)), and connected to the output interconnect by wayof a via 151 and an interconnect 152 on the other side. Further, thesecond semiconductor layer 330 of the second transistor 300 is connectedto a ground interconnect (GND) by way of a via 153 and an interconnect154 on one side and connected to the output interconnect by way of thevia 153 and the interconnect 154 on the other side.

According to this embodiment, an inverter circuit can be formed by usingthe first transistor 200 and the second transistor 300 formed in oneidentical interconnect layer.

Ninth Embodiment

FIG. 20 is a cross sectional view showing a configuration of asemiconductor device according to a ninth embodiment. The semiconductordevice has a semiconductor substrate 10 and a multilayer interconnectlayer 100.

A device isolation film 20 and transistors 12 and 14 are formed to thesemiconductor substrate 10. Further, a passive element (for example,resistance element) 16 is formed over the element isolation film 20. Thepassive element 16 is formed by a step identical with that of the gateelectrode of the transistor 12.

The first transistor 200 and the second transistor 300 shown in one ofthe first to eighth embodiments are formed in the first interconnectlayer 120 and the second interconnect layer 140 of the multilayerinterconnect layer 100. In the example shown in FIG. 20, the firsttransistor 200 and the second transistor 300 shown in the firstembodiment (FIG. 1) are formed. The planar shape of the first transistor200 is larger than the planar shape of the transistors 12 and 14.

The multilayer interconnect layer 100 has a local interconnect layer anda global interconnect layer. The local interconnect layer is aninterconnect layer for forming a circuit. The global interconnect layeris an interconnect layer for extending a power source interconnect and aground interconnect. The thickness of each of the interconnect layersforming the local interconnect layer is less than the thickness of theinterconnect layer forming the global interconnect layer. Then, thethickness of each of the interconnects of the local interconnect layeris less than the thickness of each of the interconnects of the globalinterconnect layer. The first interconnect layer 120 and the secondinterconnect layer 140 may be positioned in the local interconnect layeror positioned in the global interconnect layer.

The drain (or source) of the transistor 12 is connected by way of theinterconnect and the via formed in the multilayer interconnect layer 100to the second gate electrode 310 of the second transistor 300 to the via132. The drain of the transistor 14 is connected by way of theinterconnect and the via formed in the multilayer interconnect layer 100to the second electrode gate 310 of the second transistor 300. Othertransistor formed in the semiconductor substrate 10 may be connected tothe first gate electrode 210 of the first transistor 200. Thetransistors 12 and 14 form an internal circuit of the semiconductordevice. The transistor 14 overlaps the second semiconductor layer 330 ofthe second transistor 300 in a plan view.

According to this embodiment, the first transistor 200 and the secondtransistor 300 can be overlapped with the transistors 12 and 14 in aplan view. Accordingly, the degree of integration of the transistor canbe improved to decrease the size of the semiconductor device.

The preferred embodiments of the invention have been described withreference to the drawings, but they are examples of the invention andvarious other configurations than those described above can also beadopted.

What is claimed is:
 1. A method of manufacturing a semiconductor devicecomprising: forming a first interlayer insulating film; burying a firstgate electrode and a second gate electrode in the first interlayerinsulating film; forming a first gate insulating film and a firstsemiconductor layer over the first gate electrode; forming an insulatingcover film over an upper surface and on a lateral side of the firstsemiconductor layer; forming a second semiconductor layer over theinsulating cover film and over the second gate electrode; andselectively removing the semiconductor layer thereby leaving a portionof the second semiconductor layer that is positioned over the secondgate electrode.
 2. A method of manufacturing a semiconductor deviceincluding a first MISFET and a second MISFET, comprising steps of: (a)forming a first interlayer insulating film over the first insulatingfilm; (b) burying a first gate electrode of the first MISFET and asecond gate electrode of the second MISFET in the first interlayerinsulating film; (c) forming a first insulating film over the first gateelectrode, the second electrode and the first interlayer insulatingfilm; (d) forming a first semiconductor layer over the first gateelectrode through the first insulating film; (e) forming an insulatingcover film over an upper surface of the first semiconductor layer, alateral side of the first semiconductor layer and the first insulatingfilm; and (f) forming a second semiconductor layer over the second gateelectrode, the first insulating film and the insulating cover film,wherein a first gate insulating film of the first MISFET includes thefirst insulating film which is formed over the first gate electrode, andwherein a second gate insulating film of the second MISFET includes theinsulating cover film and the first insulating film which are formedover the second gate electrode.
 3. The method of manufacturing asemiconductor device according to claim 2, wherein the insulating coverfilm prevents contact between the first semiconductor layer and thesecond semiconductor layer.
 4. The method of manufacturing asemiconductor device according to claim 2, further comprising a step of:(c1) between the step (c) and (d), etching the first insulating film notcovered by the first semiconductor layer, wherein a thickness of thefirst insulating film not covered by the first semiconductor layer isless than a thickness of the first insulating film covered by the firstsemiconductor layer.
 5. The method of manufacturing a semiconductordevice according to claim 2, further comprising a step of: (f1) afterthe step (f), etching the insulating cover film not covered by thesecond semiconductor layer, wherein a thickness of the insulating coverfilm not covered by the second semiconductor layer is less than athickness of the insulating cover film covered by the secondsemiconductor layer.
 6. The method of manufacturing a semiconductordevice according to claim 2, wherein a thickness of the first gateinsulating film is more than a thickness of the second gate insulatingfilm.
 7. The method of manufacturing a semiconductor device according toclaim 2, wherein at the step of (c), a hard mask pattern is used as amask.
 8. The method of manufacturing a semiconductor device according toclaim 2, wherein at the step of (f), a hard mask pattern is used as amask.
 9. The method of manufacturing a semiconductor device according toclaim 2, wherein the insulating cover film contains one of SiN film,SiO₂ film, SiOC film, and SiOCH film.
 10. The method of manufacturing asemiconductor device according claim 2, wherein at least one of thefirst semiconductor layer and the second semiconductor layer is formedof an oxide semiconductor layer, and, wherein the oxide semiconductorlayer is InGaZnO layer, InZnO layer, ZnO layer, ZnAlO layer, ZnCuOlayer, NiO layer, SnO layer, SnO₂ layer, CuO layer, Cu₂O layer, CuAlOlayer, ZnO layer, ZnAlO layer, Ta₂O₅ layer, or TiO₂ layer.
 11. Themethod of manufacturing a semiconductor device according to claim 10,wherein the first semiconductor layer and the second semiconductor layerare different in at least one of the thickness.
 12. The method ofmanufacturing a semiconductor device according to claim 10, wherein thefirst semiconductor layer and the second semiconductor layer isdifferent in at least one of the material.
 13. The method ofmanufacturing a semiconductor device according to claim 2, wherein eachof the first gate electrode and the second gate electrode comprises a Cuinterconnect.
 14. The method of manufacturing a semiconductor deviceaccording to claim 13, wherein the first insulating film contains atleast one of SiN film, SiCN film, and SiC film, and wherein the firstinsulating film has a function for preventing the copper diffusion. 15.The method of manufacturing a semiconductor device according to claim13, wherein an interconnect layer comprises an Al interconnect and isformed over the first and second semiconductor layers, and wherein theinterconnect layer includes an electrode pad.